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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3566 DESCRIPTION *Low Collector Saturation Voltage *Fast Switching Speed APPLICATIONS *Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak w ww scs .i 80 60 12 5 10 2.5 1.5 V V V .cn mi e A A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 A PC Total Power Dissipation @ TC=25 TJ Junction Temperature 25 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS)-1 VCEX(SUS)-2 VCE(sat) VBE(sat) ICBO ICER ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 3.0A ; IB= 0.3A, L=1mH IC= 3.0A ; IB1=-IB2= 0.3A, VBE(OFF)=5.0V, L=180H,clamped IC= 6.0A ; IB1= 0.6A; IB2= -0.3A, VBE(OFF)= -5.0V, L= 180H,clamped IC= 3.0A; IB= 0.3A IC= 3.0A; IB= 0.3A VCB= 60V; IE= 0 VCE= 60V; RBE= 51, Ta=125 MIN 60 80 60 2SC3566 MAX UNIT V V V 0.6 1.5 10 1.0 10 1.0 10 40 40 200 V V A mA A mA A VCE= 60V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V, Ta=125 Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w K 100-200 w. VEB= 5V; IC=0 IC= 0.3A; VCE= 5V IC= 3.0A; VCE= 5V .cn mi cse is 0.5 IC= 3.0A ,RL= 17, IB1= -IB2= 0.3A,VCC 50V 3.0 0.5 s s s hFE-2 Classifications M 40-80 L 60-120 isc Websitewww.iscsemi.cn 2 |
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